JPH0428149B2 - - Google Patents

Info

Publication number
JPH0428149B2
JPH0428149B2 JP60252720A JP25272085A JPH0428149B2 JP H0428149 B2 JPH0428149 B2 JP H0428149B2 JP 60252720 A JP60252720 A JP 60252720A JP 25272085 A JP25272085 A JP 25272085A JP H0428149 B2 JPH0428149 B2 JP H0428149B2
Authority
JP
Japan
Prior art keywords
impurity
semiconductor device
layer
drain
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60252720A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61116875A (ja
Inventor
Ken Yamaguchi
Yasuhiro Shiraki
Yoshifumi Katayama
Yoshimasa Murayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60252720A priority Critical patent/JPS61116875A/ja
Publication of JPS61116875A publication Critical patent/JPS61116875A/ja
Publication of JPH0428149B2 publication Critical patent/JPH0428149B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60252720A 1985-11-13 1985-11-13 半導体装置 Granted JPS61116875A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60252720A JPS61116875A (ja) 1985-11-13 1985-11-13 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60252720A JPS61116875A (ja) 1985-11-13 1985-11-13 半導体装置

Publications (2)

Publication Number Publication Date
JPS61116875A JPS61116875A (ja) 1986-06-04
JPH0428149B2 true JPH0428149B2 (en]) 1992-05-13

Family

ID=17241319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60252720A Granted JPS61116875A (ja) 1985-11-13 1985-11-13 半導体装置

Country Status (1)

Country Link
JP (1) JPS61116875A (en])

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2610423B2 (ja) * 1987-01-21 1997-05-14 セイコー電子工業株式会社 絶縁ゲート電界効果トランジスタおよび絶縁ゲート電界効果トランジスタの製造方法
JP2677808B2 (ja) * 1987-12-12 1997-11-17 工業技術院長 電界効果型トランジスタ
JPH01181470A (ja) * 1988-01-08 1989-07-19 Mitsubishi Electric Corp Ｍｏｓ型電界効果トランジスタ
US5212104A (en) * 1991-04-26 1993-05-18 Siemens Aktiengesellschaft Method for manufacturing an mos transistor
AU4398797A (en) 1996-10-08 1998-05-05 Kabushiki Kaisha Yokota Seisakusho Automatic regulating valve apparatus
JP2003197550A (ja) 2001-12-26 2003-07-11 Hitachi Ltd 半導体装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435755B2 (en]) * 1974-01-25 1979-11-05
JPS52115668A (en) * 1976-03-25 1977-09-28 Sony Corp Field effect transistor
JPS5915388B2 (ja) * 1977-02-02 1984-04-09 株式会社日立製作所 半導体装置

Also Published As

Publication number Publication date
JPS61116875A (ja) 1986-06-04

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